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1. product profile 1.1 general description 200 w ldmos power transistor with improved video bandwidth for base station applications at frequencies from 1800 mhz to 2000 mhz. [1] test signal: 3gpp test model 1; 64 dpch; par = 8.4 db at 0.01 % probability on ccdf; carrier spacing 5 mhz. 1.2 features and benefits ? excellent ruggedness ? high efficiency ? low r th providing excellent thermal stability ? decoupling leads to enable improved video bandwidth (80 mhz typical) ? designed for low memory effects prov iding excellent pre-distortability ? internally matched for ease of use ? integrated esd protection ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? rf power amplifiers for w-cdma base statio ns and multi carrier applications in the 1800 mhz to 2000 mhz frequency range BLF8G20LS-200V power ldmos transistor rev. 4 ? 21 october 2013 product data sheet table 1. typical performance typical rf performance at t case = 25 ? c in a common source class-ab production test circuit. test signal f i dq v ds p l(av) g p ? d acpr (mhz) (ma) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 1805 to 1880 1600 28 55 17.5 33 ? 30 [1]
BLF8G20LS-200V all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 21 october 2013 2 of 14 nxp semiconductors BLF8G20LS-200V power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values [1] continuous use at maximum temperature will affect mttf 5. recommended operating conditions 6. thermal characteristics table 2. pinning pin description simplified outline graphic symbol 1drain 2gate 3source [1] 4,5 video decoupling 6n . c . 7n . c . ddd table 3. ordering information type number package name description version BLF8G20LS-200V - earless flanged ldmost ceramic package; 6 leads sot1120b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 65 v v gs gate-source voltage ? 0.5 +13 v t stg storage temperature ? 65 +150 ?c t j junction temperature - 200 ?c t case case temperature [1] - 150 ?c table 5. operating conditions symbol parameter conditions min max unit t case case temperature ? 40 +125 ?c table 6. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 ?c; p l = 55 w 0.27 k/w
BLF8G20LS-200V all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 21 october 2013 3 of 14 nxp semiconductors BLF8G20LS-200V power ldmos transistor 7. characteristics 8. test information 8.1 ruggedness in class-ab operation the BLF8G20LS-200V is capable of withstanding a load mismatch corresponding to vswr = 10 : 1 through all phases under the following conditions: v ds =28v; i dq = 1600 ma; p l = 200 w (cw); f = 1805 mhz. 8.2 impedance information [1] z s and z l defined in figure 1 . table 7. dc characteristics t j = 25 ? c, unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =1.5ma 65 - - v v gs(th) gate-source threshold voltage v ds =10v; i d = 270 ma 1.5 1.9 2.3 v v gsq gate-source quiescent voltage v ds =28v; i d = 1.6 a 1.7 2.1 2.5 v i dss drain leakage current v gs =0v; v ds =28v - - 4.2 ? a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v - 50.6 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 420 na g fs forward transconductance v ds =10v; i d = 13.5 a - 19.6 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d =9.45a -0.057- ? table 8. rf characteristics test signal: 2-carrier w-cdma; par = 8.4 db at 0.01 % probability on ccdf; 3gpp test model 1; 64 dpch; f 1 = 1807.5 mhz; f 2 = 1812.5 mhz; f 3 = 1872.5 mhz; f 4 = 1877.5 mhz; rf performance at v ds =28v; i dq =1600ma; t case =25 ? c; unless otherwise specified; in a production circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 55 w 16.3 17.5 19.2 db ? d drain efficiency p l(av) = 55 w 29 33 - % rl in input return loss p l(av) =55w - ? 15 ? 7db acpr adjacent channel power ratio p l(av) =55w - ? 30 ? 26 dbc table 9. typical impedance measured load-pull data; i dq = 1600 ma; v ds = 28 v. f z s [1] z l [1] (mhz) (? ) (? ) 1805 1.01 ? j3.66 1.04 ? j2.44 1843 1.12 ? j3.97 1.04 ? j2.44 1880 1.37 ? j4.20 1.04 ? j2.44
BLF8G20LS-200V all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 21 october 2013 4 of 14 nxp semiconductors BLF8G20LS-200V power ldmos transistor 8.3 test circuit [1] murata or capacitor of same quality. [2] american technical ce ramics type 100b or capacitor of same quality. [3] tdk or capacitor of same quality. [4] american technical ce ramics type 800b or capacitor of same quality. fig 1. definition of transistor impedance ddi gudlq = / = 6 jdwh see table 10 for list of components. fig 2. component layout table 10. list of components see figure 2 for component layout. the used pcb material is rogers ro4350b with a thickness of 0.76 mm. component description value remarks c1 multilayer ceramic chip capacitor 4.7 ? f [1] murata c2, c3 multilayer cerami c chip capacitor 20 pf [2] atc100b c4, c5 multilayer cerami c chip capacitor 4.7 ? f [3] tdk c6, c7 multilayer cerami c chip capacitor 8.2 pf [4] atc800b c8, c9 multilayer cerami c chip capacitor 4.7 ? f [3] tdk c10 multilayer ceramic chip capacitor 20 pf [4] atc800b c11 electrolytic capacitor 470 ? f, 6 3 v r1 chip resistor 4.7 ? 1206 ddd 5 & & & & & & & & & & & pp pp pp
BLF8G20LS-200V all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 21 october 2013 5 of 14 nxp semiconductors BLF8G20LS-200V power ldmos transistor 8.4 graphical data 8.4.1 1-tone cw v ds = 28 v; i dq = 1600 ma. (1) f = 1805 mhz (2) f = 1843 mhz (3) f = 1880 mhz v ds = 28 v; i dq = 1600 ma. (1) f = 1805 mhz (2) f = 1843 mhz (3) f = 1880 mhz fig 3. power gain as a function of average output power; typical values fig 4. drain efficiency as a function of average output power; typical values ddd 3 /$9 : * s s s g% ddd 3 /$9 : '
BLF8G20LS-200V all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 21 october 2013 6 of 14 nxp semiconductors BLF8G20LS-200V power ldmos transistor 8.4.2 1-carrier w-cdma v ds =28v; i dq = 1600 ma; par = 7.2 db at 0.01 ? probability on the ccdf. (1) f = 1805 mhz (2) f = 1843 mhz (3) f = 1880 mhz v ds =28v; i dq = 1600 ma; par = 7.2 db at 0.01 ? probability on the ccdf. (1) f = 1805 mhz (2) f = 1843 mhz (3) f = 1880 mhz fig 5. power gain and drain efficiency as function of average output power; typical values fig 6. peak-to-average power ratio as a function of average output power; typical values v ds = 28 v; i dq = 1600 ma; par = 7.2 db at 0.01 ? probability on the ccdf. (1) f = 1805 mhz (2) f = 1843 mhz (3) f = 1880 mhz fig 7. adjacent power channel ratio (5 mhz) as a function of average output power; typical values ddd 3 /$9 : * s * s g% g% g% ' ' * s * s ' ' ddd 3 /$9 : 3$5 g% ddd 3 /$9 : $&35 0 g%f
BLF8G20LS-200V all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 21 october 2013 7 of 14 nxp semiconductors BLF8G20LS-200V power ldmos transistor 8.4.3 2-carrier w-cdma v ds =28v; i dq = 1600 ma; f = 1843 mhz; channel spacing = 5 mhz; par = 8.4 db at 0.01 ? probability on the ccdf. v ds = 28 v; i dq = 1600 ma; channel spacing = 5 mhz; par = 8.4 db at 0.01 ? probability on the ccdf. (1) f = 1805 mhz (2) f = 1843 mhz (3) f = 1880 mhz fig 8. power gain and drain efficiency as function of average output power; typical values fig 9. power gain as a function of average output power; typical values v ds = 28 v; i dq = 1600 ma; channel spacing = 5 mhz; par = 8.4 db at 0.01 ? probability on the ccdf. (1) f = 1805 mhz (2) f = 1843 mhz (3) f = 1880 mhz v ds = 28 v; i dq = 1600 ma; channel spacing = 5 mhz; par = 8.4 db at 0.01 ? probability on the ccdf. (1) f = 1805 mhz (2) f = 1843 mhz (3) f = 1880 mhz fig 10. drain efficiency as a function of average output power; typical values fig 11. adjacent power channel ratio (5 mhz) as a function of average output power; typical values ddd 3 /$9 : * s s s g% ' * s ' ddd 3 /$9 : * s s s g% ddd 3 /$9 : ' ddd 3 /$9 : $&35 0 g%f
BLF8G20LS-200V all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 21 october 2013 8 of 14 nxp semiconductors BLF8G20LS-200V power ldmos transistor 8.4.4 is-95 v ds = 28 v; i dq = 1600 ma. (1) f = 1805 mhz (2) f = 1843 mhz (3) f = 1880 mhz v ds = 28 v; i dq = 1600 ma. (1) f = 1805 mhz (2) f = 1843 mhz (3) f = 1880 mhz fig 12. power gain as a function of average output power; typical values fig 13. drain efficiency as a function of average output power; typical values v ds = 28 v; i dq = 1600 ma. (1) f = 1805 mhz (2) f = 1843 mhz (3) f = 1880 mhz v ds = 28 v; i dq = 1600 ma. (1) f = 1805 mhz (2) f = 1843 mhz (3) f = 1880 mhz fig 14. adjacent power channel ratio (885 khz) as a function of average output power; typical values fig 15. adjacent power channel ratio (1980 khz) as a function of average output power; typical values ddd 3 /$9 : * s s s g% ddd 3 /$9 : ' ddd 3 /$9 : $&35 n g%f ddd 3 /$9 : $&35 n g%f
BLF8G20LS-200V all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 21 october 2013 9 of 14 nxp semiconductors BLF8G20LS-200V power ldmos transistor 8.4.5 2-tone vbw v ds = 28 v; i dq = 1600 ma; f c = 1843 mhz. (1) low (2) high fig 16. vbw capacity in class-ab test circuit ddd fduulhuvsdflqj0+] ,0' ,0' ,0' g%f g%f g%f ,0' ,0' ,0' ,0' ,0' ,0' ,0' ,0' ,0'
BLF8G20LS-200V all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 21 october 2013 10 of 14 nxp semiconductors BLF8G20LS-200V power ldmos transistor 9. package outline fig 17. package outline sot1120b 5hihuhqfhv 2xwolqh yhuvlrq (xurshdq surmhfwlrq ,vvxhgdwh ,(& -('(& -(,7$ 627% vrwebsr 8qlw pp pd[ qrp plq $ 'lphqvlrqv (duohvviodqjhg/'0267fhudplfsdfndjhohdgv 627% ee f'' (( )+/ 4 8 8 lqfkhv pd[ qrp plq z = \= = ? ? ? ? . . pp vfdoh ' 8 $ ) / ' ' ( 8 + = = ' z e 4 e = ( f 1rwh ploolphwhuglphqvlrqvduhghulyhgiurpwkhruljlqdolqfkglphqvlrqv glphqvlrqlvphdvxuhglqfkppiurpwkherg\ \
BLF8G20LS-200V all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 21 october 2013 11 of 14 nxp semiconductors BLF8G20LS-200V power ldmos transistor 10. handling information 11. abbreviations 12. revision history caution this device is sensitive to electrostatic di scharge (esd). observe precautions for handling electrostatic sensitive devices. such precautions are described in the ansi/esd s20.20 , iec/st 61340-5 , jesd625-a or equivalent standards. table 11. abbreviations acronym description 3gpp 3rd generation partnership project ccdf complementary cumulative distribution function cw continuous wave dpch dedicated physical channel esd electrostatic discharge ldmos laterally diffused metal oxide semiconductor ldmost laterally diffused metal oxide semiconductor transistor mttf mean time to failure par peak-to-average ratio vswr voltage standing wave ratio vbw video bandwidth w-cdma wideband code division multiple access table 12. revision history document id release date data sheet status change notice supersedes BLF8G20LS-200V v.4 20131021 product data sheet - BLF8G20LS-200V v.3 modifications: ? figure 17 on page 10 : figure has been updated. BLF8G20LS-200V v.3 20130121 product data sheet - BLF8G20LS-200V v.2 BLF8G20LS-200V v.2 20121012 product data sheet - BLF8G20LS-200V v.1 BLF8G20LS-200V v.1 20120704 objective data sheet - -
BLF8G20LS-200V all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 21 october 2013 12 of 14 nxp semiconductors BLF8G20LS-200V power ldmos transistor 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
BLF8G20LS-200V all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 4 ? 21 october 2013 13 of 14 nxp semiconductors BLF8G20LS-200V power ldmos transistor export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BLF8G20LS-200V power ldmos transistor ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 21 october 2013 document identifier: BLF8G20LS-200V please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 recommended operating conditions. . . . . . . . 2 6 thermal characteristics . . . . . . . . . . . . . . . . . . 2 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 3 8.1 ruggedness in class-ab operation . . . . . . . . . 3 8.2 impedance information . . . . . . . . . . . . . . . . . . . 3 8.3 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8.4 graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5 8.4.1 1-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8.4.2 1-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 6 8.4.3 2-carrier w-cdma . . . . . . . . . . . . . . . . . . . . . . 7 8.4.4 is-95 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.4.5 2-tone vbw . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 handling information. . . . . . . . . . . . . . . . . . . . 11 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 12 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 14 contact information. . . . . . . . . . . . . . . . . . . . . 13 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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